Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET, 24 A, 120 V Enhancement, 8-Pin PG-TSDSON-8 ISZ330N12LM6ATMA1
- RS庫存編號:
- 284-798
- 製造零件編號:
- ISZ330N12LM6ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD396.00
(不含稅)
TWD415.80
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月17日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 90 | TWD39.60 | TWD396.00 |
| 100 - 240 | TWD37.70 | TWD377.00 |
| 250 - 490 | TWD34.90 | TWD349.00 |
| 500 - 990 | TWD32.10 | TWD321.00 |
| 1000 + | TWD30.90 | TWD309.00 |
* 參考價格
- RS庫存編號:
- 284-798
- 製造零件編號:
- ISZ330N12LM6ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | OptiMOS 6 Power Transistor | |
| Package Type | PG-TSDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series OptiMOS 6 Power Transistor | ||
Package Type PG-TSDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET is designed to meet the rigorous demands of modern electronic applications, boasting optimum efficiency and reliability. The Advanced OptiMOS 6 technology empowers this component to deliver exceptional performance across various operating conditions, ensuring it remains a TOP choice for engineers and developers. Its robust design reflects a careful balance between high switching speeds and low on resistance, making it an excellent candidate for high frequency applications such as synchronous rectification and power management. The transistor is particularly well suited for industrial environments, with a thermal rating that supports both extensive operational ranges and heavy duty cycling.
Optimised for high frequency switching
Pb free lead plating for compliance
Halogen free for environmental sustainability
MSL 1 classified for reliable assembly
Superior thermal efficiency with low on resistance
Excellent gate charge for Faster switching
Fully qualified per JEDEC standards
相關連結
- Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TSDSON-8 ISZ330N12LM6ATMA1
- Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TSDSON-8 ISZ106N12LM6ATMA1
- Infineon OptiMOS Power Transistor Type P-Channel MOSFET 60 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ810P06LMATMA1
- Infineon OptiMOS 6 Power Transistor 1 Type N-Channel MOSFET 8-Pin PG-TSON-8 ISC030N12NM6ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- Infineon OptiMOS 6 Power Transistor 1 Type N-Channel MOSFET 8-Pin PG-TDSON-8 FL ISC037N12NM6ATMA1
- Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC073N12LM6ATMA1