Infineon OptiMOS Type N-Channel MOSFET, 132 A, 60 V Enhancement, 9-Pin PG-WHTFN-9 IQE030N06NM5CGSCATMA1

此圖片僅供參考,請參閲產品詳細資訊及規格

小計(1 卷,共 6000 件)*

TWD367,800.00

(不含稅)

TWD386,160.00

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 2026年4月21日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每卷*
6000 +TWD61.30TWD367,800.00

* 參考價格

RS庫存編號:
284-757
製造零件編號:
IQE030N06NM5CGSCATMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

132A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS

Package Type

PG-WHTFN-9

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

39nC

Maximum Power Dissipation Pd

100W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, RoHS, JEDEC

Automotive Standard

No

The Infineon MOSFET is a power transistor exemplifies cutting edge technology and performance, designed for efficient operation in demanding applications. Optimised for synchronous rectification, it assures superior thermal management and reliability, making it an Ideal choice for various industrial uses. Built around the OptiMOS 5 platform, it is tailored to operate effectively within a 60V range while maintaining a Compact footprint. Its robust design facilitates efficient switching, ensuring high performance while minimising losses.

Superior thermal resistance for reliability

Pb free plating for environmental compliance

100% avalanche testing for performance assurance

Exceptional gate charge for switching efficiency

Complies with halogen free standards

Ideal for rigorous industrial applications

相關連結