Infineon IQD0 Type N-Channel MOSFET, 151 A, 150 V Enhancement, 9-Pin PG-WHTFN-9 IQD063N15NM5CGSCATMA1
- RS庫存編號:
- 351-911
- 製造零件編號:
- IQD063N15NM5CGSCATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 2 件）*
TWD435.00
(不含稅)
TWD456.76
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 5,000 件從 2026年1月19日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | TWD217.50 | TWD435.00 |
| 20 - 198 | TWD195.50 | TWD391.00 |
| 200 - 998 | TWD180.50 | TWD361.00 |
| 1000 - 1998 | TWD167.50 | TWD335.00 |
| 2000 + | TWD150.00 | TWD300.00 |
* 參考價格
- RS庫存編號:
- 351-911
- 製造零件編號:
- IQD063N15NM5CGSCATMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 151A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PG-WHTFN-9 | |
| Series | IQD0 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 6.32mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Power Dissipation Pd | 333W | |
| Forward Voltage Vf | 0.83V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Height | 0.75mm | |
| Standards/Approvals | IEC61249-2-21, RoHS, JEDEC | |
| Width | 6 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 151A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PG-WHTFN-9 | ||
Series IQD0 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 6.32mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Power Dissipation Pd 333W | ||
Forward Voltage Vf 0.83V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Height 0.75mm | ||
Standards/Approvals IEC61249-2-21, RoHS, JEDEC | ||
Width 6 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon Power MOSFET comes with a low RDS(on) of 6,32 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the over molded package. This enables higher system efficiency and power density for a large variety of end applications.
Cutting edge 150 V silicon technology
Outstanding FOMs
Improved thermal performance
Ultra-low parasitic
Maximized chip or package ratio
Center-Gate footprint
Industry-standard package
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