Infineon OptiMOS N channel-Channel Power MOSFET, 127 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE031N08LM6CGSCATMA1
- RS庫存編號:
- 762-895
- 製造零件編號:
- IQE031N08LM6CGSCATMA1
- 製造商:
- Infineon
N
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TWD88.00
(不含稅)
TWD92.40
(含稅)
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* 參考價格
- RS庫存編號:
- 762-895
- 製造零件編號:
- IQE031N08LM6CGSCATMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 127A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS | |
| Package Type | PG-WHTFN-9 | |
| Mount Type | Surface Mount | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 3.15mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 3.4mm | |
| Height | 0.75mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 127A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS | ||
Package Type PG-WHTFN-9 | ||
Mount Type Surface Mount | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 3.15mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Length 3.4mm | ||
Height 0.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor is optimized for high performance SMPS featuring rated voltage of 80 V. It is halogen‑free according to IEC61249‑2‑21 and is RoHS compliant.
N‑channel
100% avalanche tested
75°C operating temperature
Pb‑free lead plating
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