Infineon IQD0 Type N-Channel MOSFET, 276 A, 100 V Enhancement, 8-Pin PG-WHSON-8 IQD020N10NM5SCATMA1
- RS庫存編號:
- 351-912
- 製造零件編號:
- IQD020N10NM5SCATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 2 件）*
TWD417.00
(不含稅)
TWD437.84
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 5,000 件從 2026年1月19日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | TWD208.50 | TWD417.00 |
| 20 - 198 | TWD188.00 | TWD376.00 |
| 200 - 998 | TWD173.50 | TWD347.00 |
| 1000 - 1998 | TWD161.00 | TWD322.00 |
| 2000 + | TWD144.00 | TWD288.00 |
* 參考價格
- RS庫存編號:
- 351-912
- 製造零件編號:
- IQD020N10NM5SCATMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 276A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-WHSON-8 | |
| Series | IQD0 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.05mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 107nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 333W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.75mm | |
| Standards/Approvals | IEC61249-2-21, RoHS, JEDEC | |
| Width | 6 mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 276A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-WHSON-8 | ||
Series IQD0 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.05mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 107nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 333W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Height 0.75mm | ||
Standards/Approvals IEC61249-2-21, RoHS, JEDEC | ||
Width 6 mm | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon Power MOSFET comes with a low RDS(on) of 2,05 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the over molded package. This enables higher system efficiency and power density for a large variety of end applications.
Cutting edge 100 V silicon technology
Outstanding FOMs
Improved thermal performance
Ultra-low parasitic
Maximized chip or package ratio
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