ROHM R65 Type N-Channel MOSFET, 650 V Enhancement, 3-Pin TO-252 R6502END3TL1
- RS庫存編號:
- 265-280
- 製造零件編號:
- R6502END3TL1
- 製造商:
- ROHM
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 組,共 10 件)*
TWD212.00
(不含稅)
TWD222.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 80 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 10 - 90 | TWD21.20 | TWD212.00 |
| 100 - 240 | TWD20.10 | TWD201.00 |
| 250 - 490 | TWD18.60 | TWD186.00 |
| 500 - 990 | TWD17.20 | TWD172.00 |
| 1000 + | TWD16.50 | TWD165.00 |
* 參考價格
- RS庫存編號:
- 265-280
- 製造零件編號:
- R6502END3TL1
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | R65 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.0Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.5nC | |
| Maximum Power Dissipation Pd | 26W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 650V | ||
Series R65 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.0Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.5nC | ||
Maximum Power Dissipation Pd 26W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM MOSFET is a low noise, Super Junction MOSFET, that place an emphasis on ease of use. This series products achieve superior performance for noise sensitive applications to reduce noise, such as audio and lighting equipment.
Pb free lead plating
RoHS compliant
Fast switching
Drive circuits can be simple
Parallel use is easy
Low on resistance
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