ROHM N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-252 R6507END3TL1

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小計(1 包,共 5 件)*

TWD303.00

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TWD318.15

(含稅)

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單位
每單位
每包*
5 - 45TWD60.60TWD303.00
50 - 95TWD58.80TWD294.00
100 - 245TWD57.60TWD288.00
250 - 995TWD56.20TWD281.00
1000 +TWD54.80TWD274.00

* 參考價格

包裝方式:
RS庫存編號:
235-2686
製造零件編號:
R6507END3TL1
製造商:
ROHM
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品牌

ROHM

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

665mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

78W

Typical Gate Charge Qg @ Vgs

20nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

2.4mm

Length

6.4mm

Height

10.4mm

Automotive Standard

No

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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