ROHM R65 1 Type N-Channel MOSFET, 125 A, 30 V Enhancement, 8-Pin HSMT-8 RH6E040BGTB1

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小計(1 組,共 10 件)*

TWD316.00

(不含稅)

TWD331.80

(含稅)

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單位
每單位
每膠帶*
10 - 90TWD31.60TWD316.00
100 - 240TWD30.00TWD300.00
250 - 490TWD27.80TWD278.00
500 - 990TWD25.60TWD256.00
1000 +TWD24.60TWD246.00

* 參考價格

包裝方式:
RS庫存編號:
265-310
製造零件編號:
RH6E040BGTB1
製造商:
ROHM
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品牌

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

125A

Maximum Drain Source Voltage Vds

30V

Series

R65

Package Type

HSMT-8

Pin Count

8

Maximum Drain Source Resistance Rds

2.9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

30.0nC

Maximum Power Dissipation Pd

78W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Number of Elements per Chip

1

The ROHM Power MOSFET features low on resistance and is housed in a compact, high power small mould package. It is well suited for a variety of applications, including switching, motor drives, and DC/DC converters, delivering efficient performance in space-constrained environments.

Pb free plating

RoHS compliant

High power small mould package

Low on resistance

100 percent Rg and UIS tested

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