Nexperia PSMN1R1-30YLE Type N-Channel MOSFET, 265 A, 30 V Enhancement, 5-Pin LFPAK PSMN1R1-30YLEX
- RS庫存編號:
- 219-435
- 製造零件編號:
- PSMN1R1-30YLEX
- 製造商:
- Nexperia
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* 參考價格
- RS庫存編號:
- 219-435
- 製造零件編號:
- PSMN1R1-30YLEX
- 製造商:
- Nexperia
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 265A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | LFPAK | |
| Series | PSMN1R1-30YLE | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 192W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 265A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type LFPAK | ||
Series PSMN1R1-30YLE | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 192W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel ASFET is optimized for low RDS on and strong safe operating area, making it Ideal for hot-swap, inrush, and linear-mode applications. It's perfect for e-Fuse, DC switches, load switches, and battery protection in 12V to 20V systems.
Low leakage less than 1 μA at 25 °C
Copper clip for low parasitic inductance and resistance
High reliability LFPAK package and qualified to 175 °C
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