Nexperia PSM Type N-Channel MOSFET, 100 A, 30 V Enhancement, 5-Pin LFPAK PSMN2R0-30YLE,115
- RS庫存編號:
- 219-316
- 製造零件編號:
- PSMN2R0-30YLE,115
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 1500 件）*
TWD65,850.00
(不含稅)
TWD69,150.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月10日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1500 + | TWD43.90 | TWD65,850.00 |
* 參考價格
- RS庫存編號:
- 219-316
- 製造零件編號:
- PSMN2R0-30YLE,115
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Power Dissipation Pd | 238W | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Power Dissipation Pd 238W | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET is housed in an LFPAK package and qualified to 175°C. It is designed for a wide range of industrial, communications, and domestic applications. Key uses include electronic fuse, hot swap, load switch, and soft start.
Enhanced forward biased safe operating area for superior linear mode operation
Very low Rdson for low conduction losses
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