Nexperia MOSFETs Type N-Channel MOSFET, 330 A, 55 V Enhancement, 5-Pin LFPAK PSMN1R2-55SLHAX
- RS庫存編號:
- 219-464
- 製造零件編號:
- PSMN1R2-55SLHAX
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 1 件）*
TWD151.00
(不含稅)
TWD158.55
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,990 個，準備發貨
膠帶 | 每膠帶 |
|---|---|
| 1 - 9 | TWD151.00 |
| 10 - 99 | TWD136.00 |
| 100 - 499 | TWD125.00 |
| 500 - 999 | TWD117.00 |
| 1000 + | TWD95.00 |
* 參考價格
- RS庫存編號:
- 219-464
- 製造零件編號:
- PSMN1R2-55SLHAX
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 330A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | MOSFETs | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.03mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 8mm | |
| Width | 8 mm | |
| Standards/Approvals | RoHS | |
| Height | 1.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 330A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series MOSFETs | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.03mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Operating Temperature 175°C | ||
Length 8mm | ||
Width 8 mm | ||
Standards/Approvals RoHS | ||
Height 1.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Avalanche rated and 100 % tested
Superfast switching with soft body diode recovery for low spiking and ringing
Narrow VGS(th) rating for easy paralleling and improved current sharing
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