Nexperia BUK9Y19 Type N-Channel MOSFET, 184 A, 55 V Enhancement, 5-Pin LFPAK
- RS庫存編號:
- 170-4884
- 製造零件編號:
- BUK9Y19-55B,115
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1500 件）*
TWD27,900.00
(不含稅)
TWD29,295.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月10日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1500 - 1500 | TWD18.60 | TWD27,900.00 |
| 3000 + | TWD18.00 | TWD27,000.00 |
* 參考價格
- RS庫存編號:
- 170-4884
- 製造零件編號:
- BUK9Y19-55B,115
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 184A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | LFPAK | |
| Series | BUK9Y19 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 85W | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Width | 4.1 mm | |
| Length | 5mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 184A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type LFPAK | ||
Series BUK9Y19 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 85W | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Maximum Operating Temperature 175°C | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Width 4.1 mm | ||
Length 5mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- PH
From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.
Suitable for thermally demanding environments due to 175°C rating Focus MOSFET applications Electric Power Steering Engine management Integrated starter generator Transmission Control Automotive Lighting Braking (ABS) Climate control
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed for use in automotive critical applications.
low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
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