STMicroelectronics SCT N-Channel MOSFET, 30 A, 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG
- RS庫存編號:
- 215-240
- 製造零件編號:
- SCT060HU75G3AG
- 製造商:
- STMicroelectronics
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TWD592.00
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TWD621.60
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訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
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|---|---|
| 1 - 9 | TWD592.00 |
| 10 - 99 | TWD532.00 |
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* 參考價格
- RS庫存編號:
- 215-240
- 製造零件編號:
- SCT060HU75G3AG
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Series | SCT | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 30 A | |
| Maximum Drain Source Voltage (Vds) | 750 V | |
| Channel Mode | Enhancement | |
| Pin Count | 7 | |
| Package Type | HU3PAK | |
| Mount Type | Surface | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Series SCT | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 30 A | ||
Maximum Drain Source Voltage (Vds) 750 V | ||
Channel Mode Enhancement | ||
Pin Count 7 | ||
Package Type HU3PAK | ||
Mount Type Surface | ||
- COO (Country of Origin):
- JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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