STMicroelectronics SCT060HU Type N-Channel MOSFET, 30 A, 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG
- RS庫存編號:
- 152-111
- 製造零件編號:
- SCT060HU75G3AG
- 製造商:
- STMicroelectronics
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可享批量折扣
小計（1 組，共 1 件）*
TWD391.00
(不含稅)
TWD410.55
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 3,000 個，準備發貨
膠帶 | 每膠帶 |
|---|---|
| 1 - 9 | TWD391.00 |
| 10 - 99 | TWD379.00 |
| 100 + | TWD368.00 |
* 參考價格
- RS庫存編號:
- 152-111
- 製造零件編號:
- SCT060HU75G3AG
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | SCT060HU | |
| Package Type | HU3PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±18 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 14.1mm | |
| Standards/Approvals | RoHS | |
| Height | 3.6mm | |
| Width | 19 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series SCT060HU | ||
Package Type HU3PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±18 V | ||
Maximum Operating Temperature 175°C | ||
Length 14.1mm | ||
Standards/Approvals RoHS | ||
Height 3.6mm | ||
Width 19 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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