STMicroelectronics N-Channel STHU60 Type N-Channel MOSFET, 54 A, 600 V Enhancement, 7-Pin HU3PAK STHU60N046DM9AG
- RS庫存編號:
- 481-130
- 製造零件編號:
- STHU60N046DM9AG
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 600 件）*
TWD130,620.00
(不含稅)
TWD137,148.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月24日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 600 + | TWD217.70 | TWD130,620.00 |
* 參考價格
- RS庫存編號:
- 481-130
- 製造零件編號:
- STHU60N046DM9AG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | STHU60 | |
| Package Type | HU3PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | N-Channel | |
| Maximum Operating Temperature | 150°C | |
| Height | 3.6mm | |
| Width | 14.1 mm | |
| Length | 11.9mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series STHU60 | ||
Package Type HU3PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration N-Channel | ||
Maximum Operating Temperature 150°C | ||
Height 3.6mm | ||
Width 14.1 mm | ||
Length 11.9mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The STMicroelectronics N-Channel Power MOSFET is based on Advanced super-junction MDmesh DM9 technology, designed for medium to high voltage applications. It features very low RDS(on) per area and an integrated fast-recovery diode. The DM9 technology uses a multi-drain manufacturing process to enhance device structure and performance. With low recovery charge (Qrr), fast recovery time (trr), and low RDS(on), this fast-switching MOSFET is Ideal for high-efficiency bridge topologies and ZVS phase-shift converters.
Low gate charge and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Excellent switching performance thanks to the extra driving source pin
AEC-Q101 qualified
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