Infineon IKA15N60TXKSA1 IGBT, 15 A 600 V TO-220
- RS庫存編號:
- 258-0995
- 製造零件編號:
- IKA15N60TXKSA1
- 製造商:
- Infineon
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TWD84.00
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TWD88.20
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD42.00 | TWD84.00 |
| 10 - 18 | TWD41.50 | TWD83.00 |
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| 30 - 38 | TWD40.50 | TWD81.00 |
| 40 + | TWD40.00 | TWD80.00 |
* 參考價格
- RS庫存編號:
- 258-0995
- 製造零件編號:
- IKA15N60TXKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 15A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 35.7W | |
| Package Type | TO-220 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1 | |
| Series | TRENCHSTOPTM | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 15A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 35.7W | ||
Package Type TO-220 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1 | ||
Series TRENCHSTOPTM | ||
Automotive Standard No | ||
The Infineon hard-switching 600 V, 15 A TRENCHSTOP IGBT3 discrete co-packed with full-rated external free-wheeling diode in a TO-220 Full-Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to the combination of trench-cell and field stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Very soft, fast recovery anti-parallel Emitter Controlled diode
High ruggedness, temperature stable behaviour
Low EMI emissions
Low gate charge
Very tight parameter distribution
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