製造零件編號

Infineon IKP10N60TXKSA1 IGBT Transistor Module, 24 A 600 V PG-TO-220-3

RS庫存編號:: 259-1529
製造零件編號:: IKP10N60TXKSA1
製造商:: Infineon

Infineon IKP10N60TXKSA1 IGBT Transistor Module, 24 A 600 V PG-TO-220-3

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RS庫存編號:: 259-1529
製造零件編號:: IKP10N60TXKSA1
製造商:: Infineon

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選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current	24 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	110 W
	Number of Transistors	3
	Package Type	PG-TO-220-3

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	品牌 Infineon
	Maximum Continuous Collector Current 24 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 110 W
	Number of Transistors 3
	Package Type PG-TO-220-3

Datasheet - IKP10N60TXKSA1

The Infineon trenchstop low loss duo pack and it is field stop technology with soft, fast recovery anti-parallel emitter controlled HE diode. It is Hard-switching 600 V, 10 A trenchstop IGBT3 co-packed with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and field stop concept.

Highest efficiency and low conduction and switching losses
Comprehensive portfolio in 600 V and 1200 V for flexibility of design
High device reliability
Low EMI emissions

Infineon IKP10N60TXKSA1 IGBT Transistor Module, 24 A 600 V PG-TO-220-3

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