Infineon IGP50N60TXKSA1 IGBT Transistor Module, 90 A 600 V PG-TO220-3
- RS庫存編號:
- 259-1524
- 製造零件編號:
- IGP50N60TXKSA1
- 製造商:
- Infineon
小計(1 管,共 50 件)*
TWD3,190.00
(不含稅)
TWD3,349.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 450 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 + | TWD63.80 | TWD3,190.00 |
* 參考價格
- RS庫存編號:
- 259-1524
- 製造零件編號:
- IGP50N60TXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 90 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 3 | |
| Maximum Power Dissipation | 333 W | |
| Package Type | PG-TO220-3 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 90 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 3 | ||
Maximum Power Dissipation 333 W | ||
Package Type PG-TO220-3 | ||
The Infineon low loss IGBT has easy parallel switching capability due to positive temperature coefficient in Vcesat. It is high ruggedness, temperature stable behaviour. It is very soft, fast recovery anti-parallel emitter controlled diode.
Maximum junction temperature 175°C
Short circuit withstand time 5 micro second
Low EMI
Low gate charge
Very tight parameter distribution
Short circuit withstand time 5 micro second
Low EMI
Low gate charge
Very tight parameter distribution
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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