Infineon IGP50N60TXKSA1 IGBT Transistor Module, 90 A 600 V PG-TO220-3

小計(1 管,共 50 件)*

TWD3,190.00

(不含稅)

TWD3,349.50

(含稅)

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RS庫存編號:
259-1524
製造零件編號:
IGP50N60TXKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

90 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

3

Maximum Power Dissipation

333 W

Package Type

PG-TO220-3

The Infineon low loss IGBT has easy parallel switching capability due to positive temperature coefficient in Vcesat. It is high ruggedness, temperature stable behaviour. It is very soft, fast recovery anti-parallel emitter controlled diode.

Maximum junction temperature 175°C
Short circuit withstand time 5 micro second
Low EMI
Low gate charge
Very tight parameter distribution

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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