Infineon Low Loss IGBT, 15 A 600 V TO-220
- RS庫存編號:
- 242-0975
- 製造零件編號:
- IGP15N60TXKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 500 件）*
TWD9,650.00
(不含稅)
TWD10,130.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月07日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 500 - 500 | TWD19.30 | TWD9,650.00 |
| 1000 - 1000 | TWD18.90 | TWD9,450.00 |
| 1500 + | TWD18.50 | TWD9,250.00 |
* 參考價格
- RS庫存編號:
- 242-0975
- 製造零件編號:
- IGP15N60TXKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 15A | |
| Product Type | Low Loss IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 130W | |
| Package Type | TO-220 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Length | 29.95mm | |
| Width | 10.36 mm | |
| Standards/Approvals | JEDEC1 | |
| Series | TRENCHSTOPTM | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 15A | ||
Product Type Low Loss IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 130W | ||
Package Type TO-220 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Length 29.95mm | ||
Width 10.36 mm | ||
Standards/Approvals JEDEC1 | ||
Series TRENCHSTOPTM | ||
Automotive Standard No | ||
The Infineon 600 V, 15 A IGBTs transistor has maximum continous collector current is 26 A.The maximum junction temperature is 175°C. It has highest efficiency,low conduction and switching losses,comprehensive portfolio in 600 V and 1200 V for flexibility of design and high device reliability.
Very soft, fast recovery anti-parallel emitter controlled diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution
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