Infineon IGBT Module 650 V, Through Hole

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣
查看批量定價選項

小計(1 托盤,共 15 件)*

TWD24,435.00

(不含稅)

TWD25,656.75

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 2026年8月31日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位
每單位
每托盤*
15 - 15TWD1,629.00TWD24,435.00
30 +TWD1,596.40TWD23,946.00

* 參考價格

RS庫存編號:
248-1199
製造零件編號:
F3L100R07W2H3B11BPSA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

20mW

Number of Transistors

4

Mount Type

Through Hole

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Length

56.7mm

Height

12mm

Standards/Approvals

RoHS

Series

F3L100R07W2H3B11

Automotive Standard

No

The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp.

Best cost-performance ratio with reduced system costs

High degree of freedom in design, and uses IGBT HighSpeed 3 technology

Highest efficiency and power density

相關連結

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。