Infineon F3L100R07W2H3B11BPSA1 IGBT Module, 70 A 650 V

RS庫存編號:: 248-1199
製造零件編號:: F3L100R07W2H3B11BPSA1
製造商:: Infineon

Infineon F3L100R07W2H3B11BPSA1 IGBT Module, 70 A 650 V

可享批量折扣

小計（1 托盤，共 15 件）*

TWD24,435.00

(不含稅)

TWD25,656.75

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月13日發貨

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單位	每單位	每托盤*
15 - 15	TWD1,629.00	TWD24,435.00
30 +	TWD1,596.40	TWD23,946.00

* 參考價格

RS庫存編號:: 248-1199
製造零件編號:: F3L100R07W2H3B11BPSA1
製造商:: Infineon

規格

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選取全部	屬性	值
	品牌	Infineon
	Maximum Continuous Collector Current	70 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	20 mW
	Number of Transistors	4

	選取全部
	品牌 Infineon
	Maximum Continuous Collector Current 70 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 20 mW
	Number of Transistors 4

Datasheet - F3L100R07W2H3B11BPSA1

The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp.

Best cost-performance ratio with reduced system costs
High degree of freedom in design, and uses IGBT HighSpeed 3 technology
Highest efficiency and power density

Infineon F3L100R07W2H3B11BPSA1 IGBT Module, 70 A 650 V

訂單超過 $1,300.00 免費送貨

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