Infineon F3L100R07W2H3B11BPSA1 IGBT Module 650 V, Through Hole
- RS庫存編號:
- 248-1200
- 製造零件編號:
- F3L100R07W2H3B11BPSA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 件）*
TWD1,633.00
(不含稅)
TWD1,714.65
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 |
|---|---|
| 1 - 1 | TWD1,633.00 |
| 2 - 5 | TWD1,551.00 |
| 6 + | TWD1,504.00 |
* 參考價格
- RS庫存編號:
- 248-1200
- 製造零件編號:
- F3L100R07W2H3B11BPSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 4 | |
| Maximum Power Dissipation Pd | 20mW | |
| Mount Type | Through Hole | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 42.5 mm | |
| Series | F3L100R07W2H3B11 | |
| Length | 56.7mm | |
| Standards/Approvals | RoHS | |
| Height | 12mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 4 | ||
Maximum Power Dissipation Pd 20mW | ||
Mount Type Through Hole | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Width 42.5 mm | ||
Series F3L100R07W2H3B11 | ||
Length 56.7mm | ||
Standards/Approvals RoHS | ||
Height 12mm | ||
Automotive Standard No | ||
The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp.
Best cost-performance ratio with reduced system costs
High degree of freedom in design, and uses IGBT HighSpeed 3 technology
Highest efficiency and power density
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