Infineon IGBT, 40 A 650 V TO-220, Through Hole
- RS庫存編號:
- 258-0988
- 製造零件編號:
- IGP40N65F5XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD2,390.00
(不含稅)
TWD2,509.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 950 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD47.80 | TWD2,390.00 |
| 100 - 100 | TWD46.80 | TWD2,340.00 |
| 150 + | TWD45.90 | TWD2,295.00 |
* 參考價格
- RS庫存編號:
- 258-0988
- 製造零件編號:
- IGP40N65F5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Length | 29.95mm | |
| Width | 10.36 mm | |
| Height | 4.57mm | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Length 29.95mm | ||
Width 10.36 mm | ||
Height 4.57mm | ||
Series High Speed Fifth Generation | ||
Automotive Standard No | ||
The Infineon hard-switching 650 V, 40 A TRENCHSTOP 5 IGBT discrete in TO-247 package for high efficiency demands. Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability.
00mV reduction in V CE(sat)
Low C OES/E OSS
Mild positive temperature coefficient V CE(sat)
Temperature stability of V f
相關連結
- Infineon IGP40N65F5XKSA1 IGBT Through Hole
- Infineon IGBT 3-Pin TO-220, Through Hole
- Infineon IGP30N65F5XKSA1 IGBT 3-Pin TO-220, Through Hole
- Infineon IGBT, 20 A 650 V TO-220
- Infineon IGP20N65H5XKSA1 IGBT, 20 A 650 V TO-220
- Infineon 18 A 650 V Through Hole
- Infineon 34 A 650 V Through Hole
- Infineon 62 A 650 V Through Hole