Infineon, Type N-Channel IGBT, 62 A 650 V, 3-Pin TO-220, Through Hole

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小計(1 管,共 50 件)*

TWD2,970.00

(不含稅)

TWD3,118.50

(含稅)

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單位
每單位
每管*
50 - 200TWD59.40TWD2,970.00
250 +TWD58.20TWD2,910.00

* 參考價格

RS庫存編號:
226-6104
製造零件編號:
IKP39N65ES5XKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current Ic

62A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

188W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.85V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

IKP39N65ES5

Automotive Standard

No

The Infineon IKP39N65ES5 has highest power density in TO-220 footprint and no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.

Very low VCEsat of 1.45 V at 25°C

4 times Ic pulse current (100°C Tc)

Maximum junction temperature Tvj 175°C

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