Infineon, Type N-Channel IGBT, 62 A 650 V, 3-Pin TO-220, Through Hole
- RS庫存編號:
- 226-6104
- 製造零件編號:
- IKP39N65ES5XKSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 226-6104
- 製造零件編號:
- IKP39N65ES5XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 62A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 188W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | IKP39N65ES5 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 62A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 188W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series IKP39N65ES5 | ||
Automotive Standard No | ||
The Infineon IKP39N65ES5 has highest power density in TO-220 footprint and no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.
Very low VCEsat of 1.45 V at 25°C
4 times Ic pulse current (100°C Tc)
Maximum junction temperature Tvj 175°C