Infineon IKP39N65ES5XKSA1 Single IGBT, 62 A 650 V, 3-Pin PG-TO220

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小計(1 管,共 50 件)*

TWD2,815.00

(不含稅)

TWD2,956.00

(含稅)

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每單位
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50 - 200TWD56.30TWD2,815.00
250 +TWD55.20TWD2,760.00

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RS庫存編號:
226-6104
製造零件編號:
IKP39N65ES5XKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

62 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

188 W

Number of Transistors

1

Package Type

PG-TO220

Configuration

Single

Channel Type

N

Pin Count

3

Transistor Configuration

Single

The Infineon IKP39N65ES5 has highest power density in TO-220 footprint and no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.

Very low VCEsat of 1.45 V at 25°C
4 times Ic pulse current (100°C Tc)
Maximum junction temperature Tvj 175°C

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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