Infineon IGP40N65H5XKSA1 IGBT, 74 A 650 V, 3-Pin PG-TO220-3
- RS庫存編號:
- 215-6631
- 製造零件編號:
- IGP40N65H5XKSA1
- 製造商:
- Infineon
可享批量折扣
小計(1 管,共 50 件)*
TWD2,260.00
(不含稅)
TWD2,373.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 450 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 100 | TWD45.20 | TWD2,260.00 |
| 150 - 200 | TWD43.40 | TWD2,170.00 |
| 250 + | TWD42.50 | TWD2,125.00 |
* 參考價格
- RS庫存編號:
- 215-6631
- 製造零件編號:
- IGP40N65H5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 74 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±30 V | |
| Maximum Power Dissipation | 250 W | |
| Package Type | PG-TO220-3 | |
| Pin Count | 3 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 74 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30 V | ||
Maximum Power Dissipation 250 W | ||
Package Type PG-TO220-3 | ||
Pin Count 3 | ||
The Infineon high speed switching series fifth generation insulated-gate bipolar transistor with low gate charge.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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