Infineon, Type N-Channel IGBT in TRENCHSTOP TM 5 Technology, 74 A 650 V, 3-Pin TO-220, Through Hole
- RS庫存編號:
- 215-6662
- 製造零件編號:
- IKP40N65H5XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD2,840.00
(不含稅)
TWD2,982.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 400 件從 2026年6月04日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 100 | TWD56.80 | TWD2,840.00 |
| 150 - 200 | TWD55.70 | TWD2,785.00 |
| 250 + | TWD54.60 | TWD2,730.00 |
* 參考價格
- RS庫存編號:
- 215-6662
- 製造零件編號:
- IKP40N65H5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT in TRENCHSTOP TM 5 Technology | |
| Maximum Continuous Collector Current Ic | 74A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | Pb-free lead plating, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT in TRENCHSTOP TM 5 Technology | ||
Maximum Continuous Collector Current Ic 74A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Series High Speed Fifth Generation | ||
Standards/Approvals Pb-free lead plating, RoHS | ||
Automotive Standard No | ||
The Infineon 650v fifth generation duopack insulated-gate bipolar transistor and diode of high speed switching series in trenchstop technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
相關連結
- Infineon IKP40N65H5XKSA1 74 A 650 V Through Hole
- Infineon 74 A 650 V Through Hole
- Infineon IKP40N65F5XKSA1 74 A 650 V Through Hole
- Infineon IGP40N65H5XKSA1 74 A 650 V Through Hole
- Infineon 650 V TRENCHSTOP IGBT 7 T7 evaluation board for 7th Generation of TRENCHSTOPTM IGBT for Energy Storage, Solar
- Infineon IGBT, 20 A 650 V TO-220
- Infineon IGP20N65H5XKSA1 IGBT, 20 A 650 V TO-220
- Infineon IGBT Module, 30 A 650 V TO-220