Infineon, Type N-Channel IGBT, 74 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 226-6114
- 製造零件編號:
- IKW40N65F5FKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD2,229.00
(不含稅)
TWD2,340.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 630 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 120 | TWD74.30 | TWD2,229.00 |
| 150 + | TWD72.80 | TWD2,184.00 |
* 參考價格
- RS庫存編號:
- 226-6114
- 製造零件編號:
- IKW40N65F5FKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 74A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 255W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.21mm | |
| Length | 42mm | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 74A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 255W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 5.21mm | ||
Length 42mm | ||
Series High Speed Fifth Generation | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IKW40N65F5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
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