Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3
- RS庫存編號:
- 242-0977
- 製造零件編號:
- IGP20N65H5XKSA1
- 製造商:
- Infineon
可享批量折扣
小計(1 管,共 500 件)*
TWD12,700.00
(不含稅)
TWD13,335.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月15日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 500 - 500 | TWD25.40 | TWD12,700.00 |
| 1000 - 1000 | TWD24.80 | TWD12,400.00 |
| 1500 + | TWD24.30 | TWD12,150.00 |
* 參考價格
- RS庫存編號:
- 242-0977
- 製造零件編號:
- IGP20N65H5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 42 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 125 W | |
| Package Type | TO-220-3 | |
| Configuration | Single | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 42 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 125 W | ||
Package Type TO-220-3 | ||
Configuration Single | ||
The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.
Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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