Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

可享批量折扣

小計(1 管,共 500 件)*

TWD12,700.00

(不含稅)

TWD13,335.00

(含稅)

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  • 2026年6月15日 發貨
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單位
每單位
每管*
500 - 500TWD25.40TWD12,700.00
1000 - 1000TWD24.80TWD12,400.00
1500 +TWD24.30TWD12,150.00

* 參考價格

RS庫存編號:
242-0977
製造零件編號:
IGP20N65H5XKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

42 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

1

Maximum Power Dissipation

125 W

Package Type

TO-220-3

Configuration

Single

The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.

Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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