Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

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小計(1 包,共 2 件)*

TWD141.00

(不含稅)

TWD148.04

(含稅)

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2 - 8TWD70.50TWD141.00
10 - 98TWD69.00TWD138.00
100 - 248TWD67.00TWD134.00
250 - 498TWD66.00TWD132.00
500 +TWD64.50TWD129.00

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包裝方式:
RS庫存編號:
242-0978
製造零件編號:
IGP20N65H5XKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

42 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

125 W

Number of Transistors

1

Configuration

Single

Package Type

TO-220-3

The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.

Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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