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Infineon IGP20N65H5XKSA1 IGBT, 20 A 650 V TO-220

Name: Infineon IGP20N65H5XKSA1 IGBT, 20 A 650 V TO-220
Brand: Infineon
SKU: 242-0978
Price: 74.02 TWD
Availability: InStock

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TWD148.04

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	20A
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	125W
	Package Type	TO-220
	Maximum Collector Emitter Saturation Voltage VceSAT	1.65V
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	±20 ±30 V
	Maximum Operating Temperature	175°C
	Series	High Speed Fifth Generation
	Standards/Approvals	JEDEC
	Length	29.95mm
	Height	4.57mm
	Width	10.36 mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 20A
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 125W
	Package Type TO-220
	Maximum Collector Emitter Saturation Voltage VceSAT 1.65V
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO ±20 ±30 V
	Maximum Operating Temperature 175°C
	Series High Speed Fifth Generation
	Standards/Approvals JEDEC
	Length 29.95mm
	Height 4.57mm
	Width 10.36 mm
	Automotive Standard No

The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.

Best-in-Class efficiency in hard switching and resonant topologies

Plug and play replacement of previous generation IGBTs

Applicable in Solar converters , Uninterruptible power supplies, Welding converters

Mid to high range switching frequency converters

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