Infineon F3L100R07W2E3B11BOMA1 IGBT Module, 117 A 650 V Module, Panel
- RS庫存編號:
- 273-7362
- 製造零件編號:
- F3L100R07W2E3B11BOMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 托盤,共 15 件)*
TWD24,183.00
(不含稅)
TWD25,392.15
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月26日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每托盤* |
|---|---|---|
| 15 - 90 | TWD1,612.20 | TWD24,183.00 |
| 105 + | TWD1,580.00 | TWD23,700.00 |
* 參考價格
- RS庫存編號:
- 273-7362
- 製造零件編號:
- F3L100R07W2E3B11BOMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 117A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 300W | |
| Package Type | Module | |
| Mount Type | Panel | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 16.4mm | |
| Length | 62.8mm | |
| Width | 56.7 mm | |
| Standards/Approvals | UL (E83335) | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 117A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 300W | ||
Package Type Module | ||
Mount Type Panel | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 16.4mm | ||
Length 62.8mm | ||
Width 56.7 mm | ||
Standards/Approvals UL (E83335) | ||
Automotive Standard No | ||
The Infineon IGBT module has 650 V VCES, 100 A continuous DC collector current 3 level phase leg phase leg IGBT module with TRENCHSTOP IGBT3, Emitter Controlled 3 diode, NTC and Press FIT Contact Technology. This IGBT module increased blocking voltage capability to 650V and available with Al2O3 substrate with low thermal resistance.
Low VCEsat
Compact design
Rugged mounting
Low inductive design
Low Switching Losses
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