Infineon F3L150R07W2E3B11BOMA1 IGBT Module, 650 A 150 V, 8-Pin Module, Panel
- RS庫存編號:
- 273-7364
- 製造零件編號:
- F3L150R07W2E3B11BOMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 托盤，共 15 件）*
TWD27,180.00
(不含稅)
TWD28,539.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每托盤* |
|---|---|---|
| 15 - 90 | TWD1,812.00 | TWD27,180.00 |
| 105 + | TWD1,775.80 | TWD26,637.00 |
* 參考價格
- RS庫存編號:
- 273-7364
- 製造零件編號:
- F3L150R07W2E3B11BOMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 650A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 150V | |
| Maximum Power Dissipation Pd | 335W | |
| Package Type | Module | |
| Mount Type | Panel | |
| Pin Count | 8 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | UL (E83335) | |
| Width | 56.7 mm | |
| Length | 62.4mm | |
| Height | 16.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 650A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 150V | ||
Maximum Power Dissipation Pd 335W | ||
Package Type Module | ||
Mount Type Panel | ||
Pin Count 8 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals UL (E83335) | ||
Width 56.7 mm | ||
Length 62.4mm | ||
Height 16.4mm | ||
Automotive Standard No | ||
The Infineon IGBT module has 650 V VCES, 150 A continuous DC collector current 3 level phase leg phase leg IGBT module with TRENCHSTOP IGBT3, Emitter Controlled 3 diode, NTC and Press FIT Contact Technology. This IGBT module increased blocking voltage capability to 650V and available with Al2O3 substrate with low thermal resistance.
Low VCEsat
Compact design
Rugged mounting
Low inductive design
Low Switching Losses
相關連結
- Infineon IGBT Module 8-Pin Module, Panel
- Infineon IGBT Module Panel
- Infineon F3L100R07W2E3B11BOMA1 IGBT Module Panel
- Infineon IGBT Module 650 V, Through Hole
- Infineon F3L100R07W2H3B11BPSA1 IGBT Module 650 V, Through Hole
- Infineon F3L150R07W2H3B11BPSA1 IGBT Module 650 V, Through Hole
- Infineon DF200R07W2H3B77BPSA1 IGBT Module 650 V, Through Hole
- Infineon DF300R07W2H3B77BPSA1 IGBT Module 650 V, Through Hole