Infineon FZ825R33HE4DBPSA1 Single IGBT Module, 825 A 3300 V AG-IHVB130
- RS庫存編號:
- 236-5198
- 製造零件編號:
- FZ825R33HE4DBPSA1
- 製造商:
- Infineon
可享批量折扣
小計（1 托盤，共 2 件）*
TWD82,454.00
(不含稅)
TWD86,576.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 4 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每托盤* |
|---|---|---|
| 2 - 2 | TWD41,227.00 | TWD82,454.00 |
| 4 + | TWD40,402.50 | TWD80,805.00 |
* 參考價格
- RS庫存編號:
- 236-5198
- 製造零件編號:
- FZ825R33HE4DBPSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 825 A | |
| Maximum Collector Emitter Voltage | 3300 V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation | 2400 kW | |
| Configuration | Single | |
| Package Type | AG-IHVB130 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 825 A | ||
Maximum Collector Emitter Voltage 3300 V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation 2400 kW | ||
Configuration Single | ||
Package Type AG-IHVB130 | ||
The Infineon single switch IGBT Module is with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. This module has high power density and AlSiC base plate for increased thermal cycling capability.
VCES is 3300 V
IC nom is 825 A
ICRM is 1650 A
It retains high current density
IC nom is 825 A
ICRM is 1650 A
It retains high current density
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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