Infineon FZ825R33HE4DBPSA1 Single IGBT Module, 825 A 3300 V AG-IHVB130
- RS庫存編號:
- 236-5199
- 製造零件編號:
- FZ825R33HE4DBPSA1
- 製造商:
- Infineon
可享批量折扣
小計(1 件)*
TWD41,226.00
(不含稅)
TWD43,287.30
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 5 件準備從其他地點送貨
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單位 | 每單位 |
|---|---|
| 1 - 1 | TWD41,226.00 |
| 2 + | TWD40,401.00 |
* 參考價格
- RS庫存編號:
- 236-5199
- 製造零件編號:
- FZ825R33HE4DBPSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 825 A | |
| Maximum Collector Emitter Voltage | 3300 V | |
| Maximum Power Dissipation | 2400 kW | |
| Number of Transistors | 2 | |
| Package Type | AG-IHVB130 | |
| Configuration | Single | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 825 A | ||
Maximum Collector Emitter Voltage 3300 V | ||
Maximum Power Dissipation 2400 kW | ||
Number of Transistors 2 | ||
Package Type AG-IHVB130 | ||
Configuration Single | ||
The Infineon single switch IGBT Module is with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. This module has high power density and AlSiC base plate for increased thermal cycling capability.
VCES is 3300 V
IC nom is 825 A
ICRM is 1650 A
It retains high current density
IC nom is 825 A
ICRM is 1650 A
It retains high current density
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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