Infineon FZ1600R33HE4BPSA1 Single IGBT Module, 1.6 kA 3300 V AG-IHVB130
- RS庫存編號:
- 236-5194
- 製造零件編號:
- FZ1600R33HE4BPSA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
TWD54,969.00
(不含稅)
TWD57,717.45
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月17日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 1 | TWD54,969.00 |
| 2 + | TWD53,869.00 |
* 參考價格
- RS庫存編號:
- 236-5194
- 製造零件編號:
- FZ1600R33HE4BPSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 1.6 kA | |
| Maximum Collector Emitter Voltage | 3300 V | |
| Maximum Power Dissipation | 3600 kW | |
| Number of Transistors | 2 | |
| Configuration | Single | |
| Package Type | AG-IHVB130 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 1.6 kA | ||
Maximum Collector Emitter Voltage 3300 V | ||
Maximum Power Dissipation 3600 kW | ||
Number of Transistors 2 | ||
Configuration Single | ||
Package Type AG-IHVB130 | ||
The Infineon single switch IGBT Module is with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. This module has high power density and AlSiC base plate for increased thermal cycling capability.
VCES is 3300 V
IC nom is 1600 A
ICRM is 3200 A
It retains high current density
IC nom is 1600 A
ICRM is 3200 A
It retains high current density
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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