Infineon FP50R12N2T7BPSA1, Type N-Channel IGBT, 50 A 1200 V, 23-Pin Module, Chassis
- RS庫存編號:
- 232-6715
- 製造零件編號:
- FP50R12N2T7BPSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 232-6715
- 製造零件編號:
- FP50R12N2T7BPSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 7 | |
| Package Type | Module | |
| Mount Type | Chassis | |
| Channel Type | Type N | |
| Pin Count | 23 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.5mm | |
| Length | 107.5mm | |
| Series | FP50R12N2T7 | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 7 | ||
Package Type Module | ||
Mount Type Chassis | ||
Channel Type Type N | ||
Pin Count 23 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 20.5mm | ||
Length 107.5mm | ||
Series FP50R12N2T7 | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon's EconoPIM 2, 50 A three phase PIM IGBT module comes with TRENCHSTOP IGBT7, Emitter Controlled 7 diode and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings. Also available with PressFIT technology. Potential applications include auxiliary inverters, motor drives and servo drives.
RoHS-compliant modules
Copper base plate for optimized heat spread
High power density