Infineon IKW50N65EH5XKSA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO247
- RS庫存編號:
- 226-6118
- 製造零件編號:
- IKW50N65EH5XKSA1
- 製造商:
- Infineon
小計（1 包，共 2 件）*
TWD308.00
(不含稅)
TWD323.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 208 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 + | TWD154.00 | TWD308.00 |
* 參考價格
- RS庫存編號:
- 226-6118
- 製造零件編號:
- IKW50N65EH5XKSA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 30V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 275 W | |
| Configuration | Single | |
| Package Type | PG-TO247 | |
| Channel Type | N | |
| Pin Count | 3 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 30V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 275 W | ||
Configuration Single | ||
Package Type PG-TO247 | ||
Channel Type N | ||
Pin Count 3 | ||
The Infineon IKW50N65EH5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Factor 2 reduction in switching losses
200mV reduction in VCEsat