Infineon IKW50N65EH5XKSA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO247

Subtotal (1 pack of 2 units)*

TWD308.00

(exc. VAT)

TWD323.40

(inc. VAT)

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Units
Per unit
Per Pack*
2 +TWD154.00TWD308.00

*price indicative

Packaging Options:
RS Stock No.:
226-6118
Mfr. Part No.:
IKW50N65EH5XKSA1
Brand:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Number of Transistors

1

Maximum Power Dissipation

275 W

Configuration

Single

Package Type

PG-TO247

Channel Type

N

Pin Count

3

The Infineon IKW50N65EH5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.

Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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