Infineon IKW50N65EH5XKSA1, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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包裝方式:
RS庫存編號:
226-6118
製造零件編號:
IKW50N65EH5XKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

80A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

275W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

30 V

Maximum Operating Temperature

175°C

Series

High Speed Fifth Generation

Standards/Approvals

JEDEC

Length

41.42mm

Automotive Standard

No

The Infineon IKW50N65EH5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.

Factor 2.5 lower Qg

Factor 2 reduction in switching losses

200mV reduction in VCEsat

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