Infineon IKW75N65ES5XKSA1, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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RS庫存編號:
144-1203
製造零件編號:
IKW75N65ES5XKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

80A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

395W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

30kHz

Maximum Collector Emitter Saturation Voltage VceSAT

1.75V

Maximum Gate Emitter Voltage VGEO

±30 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Series

TrenchStop

Standards/Approvals

No

Automotive Standard

No

Energy Rating

3.35mJ

Infineon TrenchStop IGBT Transistors, 600 and 650V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V

• Very low VCEsat

• Low turn-off losses

• Short tail current

• Low EMI

• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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