製造零件編號

Infineon, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

RS庫存編號:: 226-6116
製造零件編號:: IKW50N65EH5XKSA1
製造商:: Infineon

Infineon, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 30 件）*

TWD2,838.00

(不含稅)

TWD2,979.90

訂單超過 $1,300.00 免費送貨

有庫存

180 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
30 - 120	TWD94.60	TWD2,838.00
150 +	TWD85.20	TWD2,556.00

* 參考價格

RS庫存編號:: 226-6116
製造零件編號:: IKW50N65EH5XKSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	80A
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	275W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Maximum Gate Emitter Voltage VGEO	30 V
	Maximum Collector Emitter Saturation Voltage VceSAT	1.65V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC
	Length	41.42mm
	Series	High Speed Fifth Generation
	Width	16.13 mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 80A
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 275W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Maximum Gate Emitter Voltage VGEO 30 V
	Maximum Collector Emitter Saturation Voltage VceSAT 1.65V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC
	Length 41.42mm
	Series High Speed Fifth Generation
	Width 16.13 mm
	Automotive Standard No

Datasheet - IKW50N65EH5XKSA1

The Infineon IKW50N65EH5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.

Factor 2.5 lower Qg

Factor 2 reduction in switching losses

200mV reduction in VCEsat

Infineon, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

訂單超過 $1,300.00 免費送貨

相關連結