Toshiba, Type N-Channel Discrete IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole
- RS庫存編號:
- 168-7764
- 製造零件編號:
- GT20J341
- 製造商:
- Toshiba
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可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
TWD3,670.00
(不含稅)
TWD3,853.50
(含稅)
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單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 200 | TWD73.40 | TWD3,670.00 |
| 250 + | TWD66.00 | TWD3,300.00 |
* 參考價格
- RS庫存編號:
- 168-7764
- 製造零件編號:
- GT20J341
- 製造商:
- Toshiba
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Maximum Continuous Collector Current Ic | 20A | |
| Product Type | Discrete IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 45W | |
| Package Type | TO-220SIS | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 100kHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Operating Temperature | 150°C | |
| Series | GT20J341 | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Maximum Continuous Collector Current Ic 20A | ||
Product Type Discrete IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 45W | ||
Package Type TO-220SIS | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 100kHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Operating Temperature 150°C | ||
Series GT20J341 | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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