Toshiba GT50JR21, N-Channel IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Through Hole

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RS庫存編號:
796-5061
製造零件編號:
GT50JR21
製造商:
Toshiba
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品牌

Toshiba

Channel Type

N

Product Type

IGBT

Maximum Continuous Collector Current (Ic)

50 A

Maximum Collector Emitter Voltage (Vceo)

600 V

Pin Count

3

Package Type

TO-3P

Mount Type

Through Hole, Through Hole

Automotive Standard

No

Maximum Collector Emitter Saturation Voltage (Vce(SAT))

2 V

Maximum Gate Emitter Voltage (VGEO)

25 V

Maximum Operating Temperature

175 °C

Maximum Power Dissipation (Pd)

230 W

Minimum Operating Temperature

-55 °C

Standards/Approvals

RoHS

IGBT Discretes, Toshiba


IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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