製造零件編號

Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole

RS庫存編號:: 891-2743
製造零件編號:: GT40QR21,F(O
製造商:: Toshiba

Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole

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小計（1 件）*

TWD136.00

(不含稅)

TWD142.80

訂單超過 $1,300.00 免費送貨

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1 - 19	TWD136.00
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RS庫存編號:: 891-2743
製造零件編號:: GT40QR21,F(O
製造商:: Toshiba

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	Toshiba
	Maximum Continuous Collector Current	40 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	±25V
	Maximum Power Dissipation	230 W
	Package Type	TO-3P
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Switching Speed	2.5MHz
	Transistor Configuration	Single
	Dimensions	15.5 x 4.5 x 20mm
	Maximum Operating Temperature	175 °C
	Gate Capacitance	1500pF
	Energy Rating	0.29mJ

	選取全部
	品牌 Toshiba
	Maximum Continuous Collector Current 40 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage ±25V
	Maximum Power Dissipation 230 W
	Package Type TO-3P
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Switching Speed 2.5MHz
	Transistor Configuration Single
	Dimensions 15.5 x 4.5 x 20mm
	Maximum Operating Temperature 175 °C
	Gate Capacitance 1500pF
	Energy Rating 0.29mJ

COO (Country of Origin):: JP

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole

訂單超過 $1,300.00 免費送貨

IGBT Discretes, Toshiba

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