製造零件編號

Toshiba GT40QR21(STA1,E,D IGBT, 40 A 1200 V, 3-Pin SC-65, Through Hole

RS庫存編號:: 756-0540
製造零件編號:: GT40QR21(STA1,E,D
製造商:: Toshiba

Toshiba GT40QR21(STA1,E,D IGBT, 40 A 1200 V, 3-Pin SC-65, Through Hole

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 件）*

TWD147.00

(不含稅)

TWD154.35

訂單超過 $1,300.00 免費送貨

暫時缺貨

1 件從 2026年1月12日起裝運發貨
加上 53 件從 2026年1月14日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位
1 - 24	TWD147.00
25 - 99	TWD145.00
100 - 249	TWD138.00
250 - 499	TWD136.00
500 +	TWD134.00

* 參考價格

RS庫存編號:: 756-0540
製造零件編號:: GT40QR21(STA1,E,D
製造商:: Toshiba

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Toshiba
	Maximum Continuous Collector Current	40 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	±25V
	Maximum Power Dissipation	230 W
	Package Type	SC-65
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Switching Speed	0.2µs
	Transistor Configuration	Single
	Dimensions	20 x 15.5 x 4.5mm
	Maximum Operating Temperature	+175 °C

	選取全部
	品牌 Toshiba
	Maximum Continuous Collector Current 40 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage ±25V
	Maximum Power Dissipation 230 W
	Package Type SC-65
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Switching Speed 0.2µs
	Transistor Configuration Single
	Dimensions 20 x 15.5 x 4.5mm
	Maximum Operating Temperature +175 °C

COO (Country of Origin):: JP

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Toshiba GT40QR21(STA1,E,D IGBT, 40 A 1200 V, 3-Pin SC-65, Through Hole

訂單超過 $1,300.00 免費送貨

IGBT Discretes, Toshiba

相關連結