製造零件編號

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

RS庫存編號:: 796-5055
製造零件編號:: GT20J341
製造商:: Toshiba

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 件）*

TWD63.00

(不含稅)

TWD66.15

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 16 個，準備發貨

單位	每單位
1 - 12	TWD63.00
13 - 24	TWD61.00
25 +	TWD60.00

* 參考價格

RS庫存編號:: 796-5055
製造零件編號:: GT20J341
製造商:: Toshiba

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Toshiba
	Maximum Continuous Collector Current	20 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±25V
	Maximum Power Dissipation	45 W
	Package Type	TO-220SIS
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Switching Speed	100kHz
	Transistor Configuration	Single
	Dimensions	10 x 4.5 x 15mm
	Maximum Operating Temperature	+150 °C

	選取全部
	品牌 Toshiba
	Maximum Continuous Collector Current 20 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±25V
	Maximum Power Dissipation 45 W
	Package Type TO-220SIS
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Switching Speed 100kHz
	Transistor Configuration Single
	Dimensions 10 x 4.5 x 15mm
	Maximum Operating Temperature +150 °C

IGBT Discretes, Toshiba

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

訂單超過 $1,300.00 免費送貨

IGBT Discretes, Toshiba

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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