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透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	10A
	Maximum Collector Emitter Voltage Vceo	430V
	Maximum Power Dissipation Pd	130W
	Package Type	TO-252
	Mount Type	Surface
	Channel Type	Type N
	Pin Count	3
	Maximum Collector Emitter Saturation Voltage VceSAT	1.9V
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	±10 V
	Maximum Operating Temperature	175°C
	Series	EcoSPARK
	Standards/Approvals	RoHS
	Energy Rating	200mJ
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Product Type IGBT
	Maximum Continuous Collector Current Ic 10A
	Maximum Collector Emitter Voltage Vceo 430V
	Maximum Power Dissipation Pd 130W
	Package Type TO-252
	Mount Type Surface
	Channel Type Type N
	Pin Count 3
	Maximum Collector Emitter Saturation Voltage VceSAT 1.9V
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO ±10 V
	Maximum Operating Temperature 175°C
	Series EcoSPARK
	Standards/Approvals RoHS
	Energy Rating 200mJ
	Automotive Standard No

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

onsemi, Type N-Channel IGBT, 10 A 430 V, 3-Pin TO-252, Surface

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

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