onsemi ISL9V2040D3ST, Type N-Channel IGBT, 10 A 430 V, 3-Pin TO-252, Surface
- RS庫存編號:
- 862-9347
- 製造零件編號:
- ISL9V2040D3ST
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD249.00
(不含稅)
TWD261.45
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 620 | TWD49.80 | TWD249.00 |
| 625 - 1245 | TWD48.20 | TWD241.00 |
| 1250 + | TWD47.80 | TWD239.00 |
* 參考價格
- RS庫存編號:
- 862-9347
- 製造零件編號:
- ISL9V2040D3ST
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Maximum Continuous Collector Current Ic | 10A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 430V | |
| Maximum Power Dissipation Pd | 130W | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±10 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | EcoSPARK | |
| Automotive Standard | No | |
| Energy Rating | 200mJ | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Maximum Continuous Collector Current Ic 10A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 430V | ||
Maximum Power Dissipation Pd 130W | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±10 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series EcoSPARK | ||
Automotive Standard No | ||
Energy Rating 200mJ | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.