onsemi FGD3040G2-F085, Type N-Channel Ignition IGBT, 41 A 400 V, 3-Pin TO-252, Surface

RS庫存編號:: 807-0767
製造零件編號:: FGD3040G2-F085
製造商:: onsemi

onsemi FGD3040G2-F085, Type N-Channel Ignition IGBT, 41 A 400 V, 3-Pin TO-252, Surface

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 5 件）*

TWD333.00

(不含稅)

TWD349.65

訂單超過 $1,300.00 免費送貨

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30 件準備從其他地點送貨
加上 1,755 件從 2026年3月06日起發貨

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單位	每單位	每包*
5 - 620	TWD66.60	TWD333.00
625 - 1245	TWD64.80	TWD324.00
1250 +	TWD64.00	TWD320.00

* 參考價格

RS庫存編號:: 807-0767
製造零件編號:: FGD3040G2-F085
製造商:: onsemi

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Maximum Continuous Collector Current Ic	41A
	Product Type	Ignition IGBT
	Maximum Collector Emitter Voltage Vceo	400V
	Maximum Power Dissipation Pd	150W
	Package Type	TO-252
	Mount Type	Surface
	Channel Type	Type N
	Pin Count	3
	Switching Speed	1MHz
	Maximum Collector Emitter Saturation Voltage VceSAT	1.5V
	Minimum Operating Temperature	-55°C
	Maximum Gate Emitter Voltage VGEO	±10 V
	Maximum Operating Temperature	175°C
	Series	EcoSPARK2
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101
	Energy Rating	300mJ

	選取全部
	品牌 onsemi
	Maximum Continuous Collector Current Ic 41A
	Product Type Ignition IGBT
	Maximum Collector Emitter Voltage Vceo 400V
	Maximum Power Dissipation Pd 150W
	Package Type TO-252
	Mount Type Surface
	Channel Type Type N
	Pin Count 3
	Switching Speed 1MHz
	Maximum Collector Emitter Saturation Voltage VceSAT 1.5V
	Minimum Operating Temperature -55°C
	Maximum Gate Emitter Voltage VGEO ±10 V
	Maximum Operating Temperature 175°C
	Series EcoSPARK2
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101
	Energy Rating 300mJ

Automotive Ignition IGBT, Fairchild Semiconductor

These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.

Features

• Logic-level gate drive

• ESD Protection

• Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications

RS Product Codes

864-8802 FGB3040CS 400V 20A D2PAK;864-8805 FGB3040G2_F085 400V 25A DPAK-2;807-0767 FGD3040G2_F085 400V 25A DPAK;864-8880 FGI3040G2_F085 400V 25A I2PAK;864-8899 FGP3040G2_F085 400V 25A TO220;864-8809 FGB3245G2_F085 450V 23A D2PAK-2;864-8827 FGD3245G2_F085 450V 23A DPAK;807-0776 FGD3440G2_F085 400V 25A DPAK;864-8818 FGB3440G2_F085 400V 25A D2PAK-2;864-8893 FGP3440G2_F085 400V 25A TO220;807-8751 ISL9V5036P3_F085 360V 31A TO220;862-9369 ISL9V5045S3ST_F085 450V 43A D2PAK

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Note

Quoted current ratings apply when junction temperature Tc = +110°C.

Standards

AEC-Q101