STMicroelectronics STGD5NB120SZT4 IGBT, 10 A 1200 V, 3-Pin DPAK (TO-252), Surface Mount

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RS庫存編號:
165-5304
製造零件編號:
STGD5NB120SZT4
製造商:
STMicroelectronics
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Maximum Continuous Collector Current

10 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

75 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

6.6 x 6.2 x 2.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Gate Capacitance

430pF

Energy Rating

12.68mJ

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


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IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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