STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount
- RS庫存編號:
- 795-9019
- 製造零件編號:
- STGD18N40LZT4
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 5 件）*
TWD225.00
(不含稅)
TWD236.25
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 2,470 件從 2026年3月25日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 5 - 620 | TWD45.00 | TWD225.00 |
| 625 - 1245 | TWD43.60 | TWD218.00 |
| 1250 + | TWD43.40 | TWD217.00 |
* 參考價格
- RS庫存編號:
- 795-9019
- 製造零件編號:
- STGD18N40LZT4
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 420 V | |
| Maximum Gate Emitter Voltage | 16V | |
| Maximum Power Dissipation | 125 W | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 6.6 x 6.2 x 2.4mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 420 V | ||
Maximum Gate Emitter Voltage 16V | ||
Maximum Power Dissipation 125 W | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 6.6 x 6.2 x 2.4mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
IGBT Discretes, STMicroelectronics
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
相關連結
- STMicroelectronics STGD18N40LZT4 IGBT 3-Pin DPAK (TO-252), Surface Mount
- STMicroelectronics STGD5H60DF IGBT 3-Pin DPAK (TO-252), Surface Mount
- STMicroelectronics STGD5NB120SZT4 IGBT 3-Pin DPAK (TO-252), Surface Mount
- STMicroelectronics STGB18N40LZT4 IGBT 3-Pin D2PAK (TO-263), Surface Mount
- onsemi ISL9V3040D3ST IGBT 3-Pin DPAK (TO-252), Surface Mount
- onsemi ISL9V2040D3ST IGBT 3-Pin DPAK (TO-252), Surface Mount
- onsemi FGD3040G2-F085 IGBT 3-Pin DPAK (TO-252), Surface Mount
- STMicroelectronics STGD20N45LZAG IGBT 3-Pin DPAK, Surface Mount