STMicroelectronics STGD18N40LZT4, Type N-Channel IGBT, 30 A 390 V, 3-Pin TO-252, Surface

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包裝方式：
RS庫存編號:
795-9019
製造零件編號:
STGD18N40LZT4
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

30A

Maximum Collector Emitter Voltage Vceo

390V

Maximum Power Dissipation Pd

150W

Package Type

TO-252

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

1.7V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

16 V

Maximum Operating Temperature

175°C

Height

2.4mm

Standards/Approvals

AEC Q101

Series

STGD18N40LZ

Length

6.6mm

Energy Rating

180mJ

Automotive Standard

AEC-Q101

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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