STMicroelectronics, Type N-Channel IGBT, 25 A 450 V, 3-Pin TO-252, Surface
- RS庫存編號:
- 164-6958
- 製造零件編號:
- STGD20N45LZAG
- 製造商:
- STMicroelectronics
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可享批量折扣
小計(1 卷,共 2500 件)*
TWD113,000.00
(不含稅)
TWD118,650.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月17日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | TWD45.20 | TWD113,000.00 |
| 12500 + | TWD44.30 | TWD110,750.00 |
* 參考價格
- RS庫存編號:
- 164-6958
- 製造零件編號:
- STGD20N45LZAG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 25A | |
| Maximum Collector Emitter Voltage Vceo | 450V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 8.4μs | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Maximum Gate Emitter Voltage VGEO | 16 V | |
| Maximum Operating Temperature | 175°C | |
| Series | Automotive Grade | |
| Standards/Approvals | AEC-Q101 | |
| Length | 6.6mm | |
| Width | 6.2 mm | |
| Height | 2.4mm | |
| Automotive Standard | AEC-Q101 | |
| Energy Rating | 300mJ | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 25A | ||
Maximum Collector Emitter Voltage Vceo 450V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 8.4μs | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Maximum Gate Emitter Voltage VGEO 16 V | ||
Maximum Operating Temperature 175°C | ||
Series Automotive Grade | ||
Standards/Approvals AEC-Q101 | ||
Length 6.6mm | ||
Width 6.2 mm | ||
Height 2.4mm | ||
Automotive Standard AEC-Q101 | ||
Energy Rating 300mJ | ||
This application-specific IGBT utilizes the most Advanced PowerMESH™ technology optimized for Coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.
SCIS energy of 300 mJ @ TJ = 25 °C
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
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