STMicroelectronics STGD20N45LZAG IGBT, 25 A 475 V, 3-Pin DPAK, Surface Mount
- RS庫存編號:
- 164-6958
- 製造零件編號:
- STGD20N45LZAG
- 製造商:
- STMicroelectronics
可享批量折扣
小計（1 卷，共 2500 件）*
TWD113,000.00
(不含稅)
TWD118,650.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年5月22日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | TWD45.20 | TWD113,000.00 |
| 12500 + | TWD44.30 | TWD110,750.00 |
* 參考價格
- RS庫存編號:
- 164-6958
- 製造零件編號:
- STGD20N45LZAG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current | 25 A | |
| Maximum Collector Emitter Voltage | 475 V | |
| Maximum Gate Emitter Voltage | 16V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 125 W | |
| Package Type | DPAK | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 6.6 x 2.4 x 6.2mm | |
| Energy Rating | 300mJ | |
| Automotive Standard | AEC-Q101 | |
| Maximum Operating Temperature | +175 °C | |
| Gate Capacitance | 1011pF | |
| Minimum Operating Temperature | -55 °C | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current 25 A | ||
Maximum Collector Emitter Voltage 475 V | ||
Maximum Gate Emitter Voltage 16V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 125 W | ||
Package Type DPAK | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 6.6 x 2.4 x 6.2mm | ||
Energy Rating 300mJ | ||
Automotive Standard AEC-Q101 | ||
Maximum Operating Temperature +175 °C | ||
Gate Capacitance 1011pF | ||
Minimum Operating Temperature -55 °C | ||
This application-specific IGBT utilizes the most advanced PowerMESH™ technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.
SCIS energy of 300 mJ @ TJ = 25 °C
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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