STMicroelectronics STGB20N45LZAG IGBT, 25 A 475 V, 3-Pin D2PAK, Surface Mount
- RS庫存編號:
- 164-7013
- 製造零件編號:
- STGB20N45LZAG
- 製造商:
- STMicroelectronics
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TWD393.00
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TWD412.65
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 245 | TWD78.60 | TWD393.00 |
| 250 - 495 | TWD76.80 | TWD384.00 |
| 500 + | TWD75.80 | TWD379.00 |
* 參考價格
- RS庫存編號:
- 164-7013
- 製造零件編號:
- STGB20N45LZAG
- 製造商:
- STMicroelectronics
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current | 25 A | |
| Maximum Collector Emitter Voltage | 475 V | |
| Maximum Gate Emitter Voltage | 16V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 150 W | |
| Package Type | D2PAK | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 4.6 x 9.35mm | |
| Automotive Standard | AEC-Q101 | |
| Maximum Operating Temperature | +175 °C | |
| Energy Rating | 300mJ | |
| Minimum Operating Temperature | -55 °C | |
| Gate Capacitance | 1011pF | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current 25 A | ||
Maximum Collector Emitter Voltage 475 V | ||
Maximum Gate Emitter Voltage 16V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 150 W | ||
Package Type D2PAK | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 4.6 x 9.35mm | ||
Automotive Standard AEC-Q101 | ||
Maximum Operating Temperature +175 °C | ||
Energy Rating 300mJ | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 1011pF | ||
This application-specific IGBT utilizes the most advanced PowerMESH™ technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required
SCIS energy of 300 mJ @ TJ = 25 °C
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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