Infineon IKD15N60RATMA1, Type N-Channel IGBT, 30 A 600 V, 3-Pin TO-252, Surface

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小計(1 包,共 5 件)*

TWD176.00

(不含稅)

TWD184.80

(含稅)

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5 - 5TWD35.20TWD176.00
10 - 95TWD34.00TWD170.00
100 - 245TWD33.40TWD167.00
250 - 495TWD32.60TWD163.00
500 +TWD29.80TWD149.00

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包裝方式:
RS庫存編號:
215-6657
製造零件編號:
IKD15N60RATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

30A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

250W

Package Type

TO-252

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

20kHz

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Series

TrenchStop

Standards/Approvals

JEDEC

Automotive Standard

No

The Infineon insulated-gate bipolar transistor with integrated diode in packages offering space saving advantage.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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