Infineon IKD15N60RATMA1, Type N-Channel IGBT, 30 A 600 V, 3-Pin TO-252, Surface
- RS庫存編號:
- 215-6657
- 製造零件編號:
- IKD15N60RATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 5 件)*
TWD176.00
(不含稅)
TWD184.80
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD35.20 | TWD176.00 |
| 10 - 95 | TWD34.00 | TWD170.00 |
| 100 - 245 | TWD33.40 | TWD167.00 |
| 250 - 495 | TWD32.60 | TWD163.00 |
| 500 + | TWD29.80 | TWD149.00 |
* 參考價格
- RS庫存編號:
- 215-6657
- 製造零件編號:
- IKD15N60RATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 20kHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | TrenchStop | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 20kHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series TrenchStop | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
The Infineon insulated-gate bipolar transistor with integrated diode in packages offering space saving advantage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
